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E28F200CVT80 参数 Datasheet PDF下载

E28F200CVT80图片预览
型号: E28F200CVT80
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位SmartVoltage引导块闪存系列 [2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 55 页 / 633 K
品牌: INTEL [ INTEL ]
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E
2-MBIT SmartVoltage BOOT BLOCK FAMILY  
(1)  
4.12 AC Characteristics—Read Only Operations —Extended Temperature  
Prod  
TBV-80  
TBV-80  
TBE-120  
Symbol  
Parameter  
VCC  
Load  
Notes  
3.3 ± 0.3 V(5)  
50 pF  
5 V ± 10%(6)  
100 pF  
Unit  
Min  
Max  
Min  
Max  
tAVAV  
tAVQV  
tELQV  
tPHQV  
tGLQV  
tELQX  
tEHQZ  
tGLQX  
tGHQZ  
tOH  
Read Cycle Time  
110  
80  
ns  
ns  
ns  
µs  
ns  
ns  
ns  
ns  
ns  
ns  
Address to Output Delay  
CE# to Output Delay  
RP# to Output Delay  
OE# to Output Delay  
CE# to Output in Low Z  
CE# to Output in High Z  
OE# to Output in Low Z  
OE# to Output in High Z  
110  
110  
0.8  
65  
80  
80  
2
0.45  
40  
2
3
3
3
3
3
0
0
0
0
0
0
45  
45  
25  
25  
Output Hold from Address, CE#,  
or OE# Change, Whichever  
Occurs First  
tELFL  
tELFH  
0
0
CE# Low to BYTE# High or Low  
3
ns  
tAVFL  
Address to BYTE# High or Low  
BYTE# to Output Delay  
3
5
5
ns  
ns  
tFLQV  
tFHQV  
tFLQZ  
tPLPH  
3,4  
110  
80  
BYTE# Low to Output in High Z  
Reset Pulse Width  
3
7
45  
30  
60  
ns  
ns  
ns  
150  
60  
tPLQZ  
RP# Low to Output High-Z  
150  
NOTES:  
1. See AC Input/Output Reference Waveform for timing measurements.  
2. OE# may be delayed up to tCE–tOE after the falling edge of CE# without impact on tCE  
.
3. Sampled, but not 100% tested.  
4.  
tFLQV, BYTE# switching low to valid output delay will be equal to tAVQV, measured from the time DQ15/A–1 becomes valid.  
5. See Test Configuration (Figure 21), 3.6 V and 3.3 ± 0.3 V Standard Test component values.  
6. See Test Configuration (Figure 21), 5 V Standard Test component values.  
7. The specification tPLPH is the minimum time that RP# must be held low in order to product a valid reset of the device.  
49  
SEE NEW DESIGN RECOMMENDATIONS  
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