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E28F200CVT80 参数 Datasheet PDF下载

E28F200CVT80图片预览
型号: E28F200CVT80
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位SmartVoltage引导块闪存系列 [2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 55 页 / 633 K
品牌: INTEL [ INTEL ]
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2-MBIT SmartVoltage BOOT BLOCK FAMILY  
E
4.4  
DC Characteristics—Commercial  
BV-60  
BV-80  
BV-120  
Prod  
Sym  
Parameter  
VCC  
3.3 ± 0.3 V  
5 V ± 10%  
Unit  
Test Conditions  
Note  
Typ  
Max  
Typ  
Max  
VCC = VCC Max  
VIN = VCC or GND  
VCC = VCC Max  
IIL  
Input Load Current  
1
1
± 1.0  
± 10  
1.5  
± 1.0  
µA  
µA  
ILO  
ICCS  
Output Leakage Current  
VCC Standby Current  
± 10  
2.0  
V
IN = VCC or GND  
VCC = VCC Max  
CE# = RP# = BYTE# =  
WP# = VIH  
1,3  
0.4  
60  
0.8  
50  
mA  
VCC = VCC Max  
110  
8
130  
8
µA  
µA  
CE# = RP# = VCC  
0.2 V  
±
VCC = VCC Max  
ICCD  
VCC Deep Power-Down  
Current  
1
0.2  
15  
0.2  
50  
V
IN = VCC or GND  
RP# = GND ± 0.2 V  
VCC Read Current for  
Word or Byte  
CMOS INPUTS  
VCC = VCC Max  
ICCR  
1,5,6  
30  
60  
mA  
CE# = GND, OE# = VCC  
f = 10 MHz (5 V),  
5 MHz (3.3 V)  
IOUT = 0 mA, Inputs =  
GND ± 0.2 V or VCC  
± 0.2 V  
TTL INPUTS  
15  
30  
55  
65  
mA  
VCC = VCC Max  
CE# = VIL, OE# = VIH  
f = 10 MHz (5 V),  
5 MHz (3.3 V)  
IOUT = 0 mA, Inputs =  
VIL or VIH  
VCC Program Current for  
Word or Byte  
VPP = VPPH1 (at 5 V)  
Program in Progress  
ICCW  
1,4  
1,4  
13  
10  
13  
10  
30  
25  
30  
25  
30  
30  
18  
18  
50  
45  
35  
30  
mA  
mA  
mA  
mA  
VPP = VPPH2 (at 12 V)  
Program in Progress  
VPP = VPPH1 (at 5 V)  
Block Erase in Progress  
ICCE  
VCC Erase Current  
VPP = VPPH2 (at 12 V)  
Block Erase in Progress  
30  
SEE NEW DESIGN RECOMMENDATIONS  
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