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DT28F320J5-120 参数 Datasheet PDF下载

DT28F320J5-120图片预览
型号: DT28F320J5-120
PDF下载: 下载PDF文件 查看货源
内容描述: 5伏英特尔的StrataFlash ?内存 [5 Volt Intel StrataFlash® Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 51 页 / 620 K
品牌: INTEL [ INTEL ]
 浏览型号DT28F320J5-120的Datasheet PDF文件第28页浏览型号DT28F320J5-120的Datasheet PDF文件第29页浏览型号DT28F320J5-120的Datasheet PDF文件第30页浏览型号DT28F320J5-120的Datasheet PDF文件第31页浏览型号DT28F320J5-120的Datasheet PDF文件第33页浏览型号DT28F320J5-120的Datasheet PDF文件第34页浏览型号DT28F320J5-120的Datasheet PDF文件第35页浏览型号DT28F320J5-120的Datasheet PDF文件第36页  
28F320J5 and 28F640J5  
Figure 6. Write to Buffer Flowchart  
Bus  
Operation  
Start  
Command  
Comments  
Data = E8H  
Set Time-Out  
Write  
Read  
Write to Buffer  
Block Address  
Issue Write to Buffer  
Command E8H, Block  
Address  
No  
XSR. 7 = Valid  
Addr = Block Address  
Check XSR. 7  
1 = Write Buffer Available  
0 = Write Buffer Not Available  
Read Extended  
Status Register  
Standby  
Data = N = Word/Byte Count  
N = 0 Corresponds to Count = 1  
Addr = Block Address  
Write  
(Note 1, 2)  
0
Write to  
Buffer Time-Out?  
XSR.7 =  
1
Write  
(Note 3, 4)  
Data = Write Buffer Data  
Addr = Device Start Address  
Write Word or Byte  
Count, Block Address  
Write  
(Note 5, 6)  
Data = Write Buffer Data  
Addr = Device Address  
Program Buffer  
to Flash  
Confirm  
Data = D0H  
Addr = Block Address  
Write Buffer Data,  
Start Address  
Write  
Status Register Data with the  
Device Enabled, OE# Low  
Updates SR  
Read  
(Note 7)  
X = 0  
Yes  
Addr = Block Address  
Check SR.7  
1 = WSM Ready  
0 = WSM Busy  
Check  
X = N?  
Standby  
No  
1. Byte or word count values on DQ 0 - DQ7 are loaded into the  
Yes  
count register. Count ranges on this device for byte mode are  
= 00H to 1FH and for word mode are N = 0000H to 000FH.  
2. The device now outputs the status register when read (XSR is  
no longer available).  
N
Abort Write to  
Buffer Command?  
Yes  
Write to Another  
Block Address  
3. Write Buffer contents will be programmed at the device start  
address or destination flash address.  
4. Align the start address on a Write Buffer boundary for  
maximum programming performance (i.e., A 4 - A0 of the start  
address = 0).  
Yes  
No  
Write to Buffer  
Aborted  
Write Next Buffer Data,  
Device Address  
5. The device aborts the Write to Buffer command if the current  
address is outside of the original block address.  
6. The status register indicates an "improper command  
sequence" if the Write to Buffer command is aborted. Follow this  
with a Clear Status Register command.  
X = X + 1  
Program Buffer to Flash  
Confirm D0H  
7. Toggling OE# (low to high to low) updates the status register.  
This can be done in place of issuingthe Read Status Register  
command.  
Another Write to  
Buffer?  
Full status check can be done after all erase and write sequences  
complete. Write FFH after the last operation to reset the device to  
read array mode.  
Issue Read  
Status Command  
No  
Read Status Register  
1
0
SR.7 =  
1
Full Status  
Check if Desired  
Programming  
Complete  
0606_07  
32  
Datasheet  
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