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313072-002 参数 Datasheet PDF下载

313072-002图片预览
型号: 313072-002
PDF下载: 下载PDF文件 查看货源
内容描述: 高级内存缓冲器 [Advanced Memory Buffer]
分类和应用:
文件页数/大小: 250 页 / 3863 K
品牌: INTEL [ INTEL ]
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Transparent Mode  
Timing may be changed on the fly (for example, in the middle of a test pattern) by  
changing the placement of edges from the tester. DRAM mode registers can be  
programmed on the fly as needed by including (E)MRS commands in the tester data  
stream. There is no need to change AMB settings during a test. The only exception is  
that DRAM BL may be changed on the fly but the data logging logic may get confused if  
DRAM BL does not match the BL expected by the data logger. All other DRAM settings  
such as AL and CL may be changed at any time.  
Figure 10-1. Transparent Mode Timing  
10.2.3.1  
10.2.3.2  
Write Timing  
Figure 10-2 illustrates write timing with the tester set to WL=3, 4, and 5. There is a  
constant offset of three cycles from TDRV to TDQ and one cycle from TDQ to DRAM DQ.  
The DRAM mode registers must, of course, be set to the appropriate timing to  
recognize the read. For BL=8 the TDRV pulse will be 4 clocks wide rather than 2.  
Extended Write Timing  
The TDRV pulse may be extended indefinitely in cases where it is necessary to apply  
constant data to the DRAM pins. As long as TDRV remains asserted the AMB will  
continuously propagate data from the tester TDQ inputs through to the DRAM DQ pins  
(delayed by 1 cycle) as indicated below.  
Intel® 6400/6402 Advanced Memory Buffer Datasheet  
103