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313072-002 参数 Datasheet PDF下载

313072-002图片预览
型号: 313072-002
PDF下载: 下载PDF文件 查看货源
内容描述: 高级内存缓冲器 [Advanced Memory Buffer]
分类和应用:
文件页数/大小: 250 页 / 3863 K
品牌: INTEL [ INTEL ]
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Transparent Mode  
Figure 10-2. Transparent Mode Write Timing  
10.2.3.3  
Read Timing  
Figure 10-3 shows read timing with the tester set to RL=3 and RL=5. Due to  
complexities in the handling of read data in an AMB there is a latency of several cycles  
from the TDRV pulse to TDQ and test status outputs. Specifically there is a constant  
latency of four cycles plus the programmed CMD2DATA value from TDRV to TDQ (8  
cycles total using the AMB settings above) and one cycle from TDQ to DRAM DQ. An  
AMB may support shorter latencies but this is not required.  
TCMP is latched on the rising edge of core clock. This initiates the read inside the AMB.  
In most cases the AMB will latch DRAM read data slightly before TDQ data is needed.  
The reason is most AMBs will load DDR data into a queue in the DRAM domain and  
unload the data on a core clock edge. TDQ is typically not needed until the DRAM data  
is in the core. The comparison of actual and expected data and propagation back to the  
tester will occur on the next core clock edge.  
The timings below are for BL=4. When testing BL=8 the TCMP pulse should be 3 clocks  
wide rather than 1. Tester DQ data, DRAM data and the status outputs will be extended  
appropriately to cover the burst length.  
104  
Intel® 6400/6402 Advanced Memory Buffer Datasheet