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300 参数 Datasheet PDF下载

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型号: 300
PDF下载: 下载PDF文件 查看货源
内容描述: 赛扬D处理器 [Celeron D Processor]
分类和应用:
文件页数/大小: 95 页 / 2070 K
品牌: INTEL [ INTEL ]
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Electrical Specifications  
5. 0.24 V is defined at 20% of nominal VTT of 1.2 V.  
6. The TAP signal group must meet the signal quality specifications.  
7. The maximum output current is based on maximum current handling capability of the buffer and is  
not specified into the test load.  
8. Leakage to VSS with land held at VTT.  
9. Leakage to VTT with land held at 300 mV.  
Table 13.  
VTTPWRGD DC Specifications  
Symbol  
Parameter  
Input Low Voltage  
Input High Voltage  
Min  
Typ  
Max  
Unit  
VIL  
0.3  
V
V
VIH  
0.9  
Table 14.  
BSEL[2:0] and VID[5:0] DC Specifications  
Symbol  
Parameter  
Max  
Unit  
Ω
Notes1, 2  
R
ON (BSEL) Buffer On Resistance  
120  
120  
-
-
RON (VID)  
IOL  
ILO  
Buffer On Resistance  
Max Land Current  
Ω
2.4  
mA  
µA  
V
-
3
Output Leakage Current  
Voltage Tolerance  
200  
VTOL  
VTT(max)  
-
NOTES:  
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.  
2. These parameters are not tested and are based on design simulations.  
3. Leakage to VSS with land held at 1.2 V.  
Table 15.  
BOOTSELECT DC Specifications  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
Notes  
1
VIL  
VIH  
Input Low Voltage  
Input High Voltage  
0.24  
V
V
1
0.96  
NOTES:  
1. These parameters are not tested and are based on design simulations.  
Datasheet  
27  
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