E
FAST BOOT BLOCK DATASHEET
(3, 4, 5)
8.8
Extended Temperature Block Erase And Program Performance
2.7 V VPP
Notes Typ(1)
Max
12 V VPP
#
Sym
W19 tWHRH1, Program Time
tEHRH1 Block Program Time (Parameter)
Parameter
Typ(1)
Max
Unit
2
2
2
2
2
23.5
0.10
0.8
1
200
0.30
2.4
4
8
185
0.10
0.8
4
µs
sec
sec
sec
sec
µs
0.03
0.24
0.8
1.1
5
Block Program Time (Main)
tWHRH2, Block Erase Time (Parameter)
tEHRH2 Block Erase Time (Main)
1.8
6
5
5
tWHRH5, Program Suspend Latency
tEHRH5
10
10
tWHRH6, Erase Suspend Time
tEHRH6
13
20
10
12
µs
NOTES:
1. Typical values measured at TA = +25 °C and nominal voltages. Subject to change based on device characterization.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled, but not 100% tested.
5. Reference the AC Waveform for Write Operations Figure 20.
8.9
Automotive Temperature Operating Conditions
Except for the specifications given in this section, all DC and AC characteristics are identical to those listed in
the extended temperature specifications. See Section 7.2 for extended temperature specifications.
Symbol
TA
Parameter
Operating Temperature
VCC Supply Voltage
I/O Voltage
Notes
Min
-40
Max
+125
3.6
Unit
°C
VCC1
1
3.0
V
V
VCCQ1
VPPH1
VPPH2
Cycling
1,2
1
3.0
3.6
VPP Supply Voltage
3.0
3.6
V
VPP Supply Voltage
1,3
11.4
30,000
1,000
12.6
V
Parameter Block Erase Cycling
Main Block Erase Cycling
Cycles
Cycles
NOTES:
1. See DC Characteristics tables for voltage range-specific specifications.
2. The voltage swing on the inputs, VIN is required to match VCCQ
.
3. Applying VPP = 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on the main and
parameter blocks. A hard connection to VPP = 11.4 V–12.6 V is not allowed and can cause damage to the device.
41
PRODUCT PREVIEW
INTEL [ INTEL ]
