FAST BOOT BLOCK DATASHEET
8.6 AC Characteristics—Write Operations
E
Max Unit
(1, 2)
—Extended Temperature
Valid for All Speed and
Voltage Combinations
#
Sym
Parameter
Notes
Min
W1
tPHWL (tPHEL
)
RST# High Recovery to WE# (CE#) Going
Low
3
600
µs
W2
W3
W4
W5
W6
W7
W8
W9
tELWL (tWLEL
)
CE# (WE#) Setup to WE# (CE#) Going Low
Write Pulse Width
6
6
0
75
10
70
75
75
10
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWP
tVLVH
ADV# Pulse Width
tDVWH (tDVEH
tAVWH (tAVEH
tVLEH (tVLWH
tAVVH
tWHEH (tEHWH
)
Data Setup to WE# (CE#) Going High
Address Setup to WE# (CE#) Going High
ADV# Setup to WE# (CE#) Going High
Address Setup to ADV# Going High
CE# (WE#) Hold from WE# (CE#) High
Data Hold from WE# (CE#) High
Address Hold from WE# (CE#) High
Address Hold from ADV# Going High
Write Pulse Width High
4
4
)
)
)
W10 tWHDX (tEHDX
)
0
W11 tWHAX (tEHAX
)
0
W12 tVHAX
3
W13 tWPH
7
3
3
20
200
200
0
W14 tPHWH (tPHHEH
)
WP# Setup to WE# (CE#) Going High
VPP Setup to WE# (CE#) Going High
Write Recovery before Read
W15 tVPWH (tVPEH
)
W16 tWHGL (tEHGL
)
W17 tQVBH
WP# Hold from Valid SRD
3,5
3,5
0
W18 tQVVL
VPP Hold from Valid SRD
0
NOTES:
1. Read timing characteristics during block erase and program operations are the same as during read-only operations. Refer
to AC Characteristics —Read-Only Operations.
2. A write operation can be initiated and terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Refer to Table 3 for valid AIN and DIN for block erase or program.
5. VPP should be held at VPPH1/2 until determination of block erase or program success.
6. Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going high
(whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH
7. Write pulse width high (tWPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low
(whichever goes low last). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL
.
.
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