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28F800F3 参数 Datasheet PDF下载

28F800F3图片预览
型号: 28F800F3
PDF下载: 下载PDF文件 查看货源
内容描述: FAST BOOT BLOCK闪存系列8位和16 MBIT [FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT]
分类和应用: 闪存
文件页数/大小: 47 页 / 274 K
品牌: INTEL [ INTEL ]
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E
FAST BOOT BLOCK DATASHEET  
(1) —  
8.11 DC Characteristics  
Automotive Temperature  
Sym  
Parameter  
Note Typ Max Unit  
Test Condition  
ICCS VCC Standby Current  
2,6  
40  
60  
60  
60  
75  
75  
µA VCC = VCC Max  
VCCQ = VCCQ Max  
CE# = RST# = VIH  
ICCR VCC Read Current  
4,6  
mA Asynchronous VCC = VCC Max  
tAVAV = Min  
VCCQ = VCCQ Max  
VIN = VIH or VIL  
mA Synchronous  
CE# = VIL  
CLK = 22 MHz OE# = VIH  
Burst length = 1  
ICCW VCC Program Current  
3,5,7  
3,5,7  
8
8
8
8
20  
20  
20  
20  
40  
25  
25  
25  
mA VPP = VPPH1 (3.0 V–3.6 V)  
Program in progress  
mA VPP = VPPH2 (11.4 V–12.6 V)  
Program in progress  
ICCE VCC Block Erase  
Current  
mA VPP = VPPH1 (3.0 V–3.6 V)  
Block erase in progress  
mA VPP = VPPH2 (11.4 V–12.6 V)  
Block erase in progress  
IPPW VPP Program Current  
3,5,7 15  
mA VPP = VPPH1 (3.0 V–3.6 V)  
Program in progress  
10  
3,5,7 13  
8
mA VPP = VPPH2 (11.4 V–12.6 V)  
Program in progress  
IPPE  
VPP Block Erase  
Current  
mA VPP = VPPH1 (3.0 V–3.6 V)  
Block erase in progress  
mA VPP = VPPH2 (11.4 V–12.6 V)  
Block erase in progress  
NOTES:  
1. All currents are in RMS unless otherwise noted. Typical values at normal VCC, T = +25 °C.  
2. Erases and program operations are inhibited when VPP VPPLK, and not guaranteed outside the valid VPP ranges of VPPH1  
and VPPH2  
.
3. Sampled, not 100% tested.  
4. Automatic Power Savings (APS) reduces ICCR to approximately standby levels, in static operation.  
5. 12 V (11.4 V–12.6 V) can only be applied to V for a maximum of 80 hours over the lifetime of the device. V should not  
PP PP  
be permanently tied to 12 V.  
6. The specification is the sum of VCC and VCCQ currents.  
PRODUCT PREVIEW  
43  
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