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28F800F3 参数 Datasheet PDF下载

28F800F3图片预览
型号: 28F800F3
PDF下载: 下载PDF文件 查看货源
内容描述: FAST BOOT BLOCK闪存系列8位和16 MBIT [FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT]
分类和应用: 闪存
文件页数/大小: 47 页 / 274 K
品牌: INTEL [ INTEL ]
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E
FAST BOOT BLOCK DATASHEET  
8.4  
DC Characteristics—Extended Temperature (Continued)  
VCC  
2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V  
VCCQ 2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V  
Sym  
Parameter  
Note Min  
Max  
Min  
Max  
Min  
Max Unit  
Test Conditions  
VIL  
Input Low  
–0.4  
0.4  
–0.2  
0.2  
–0.2  
0.2  
V
Voltage  
VCCQ  
0.4V  
VCCQ  
0.2V  
VCCQ  
0.2V  
VIH  
Input High  
Voltage  
V
VOL  
Output Low  
Voltage  
0.10 -0.10 0.10 -0.10 0.10  
V
V
V
VCC = VCCMin  
V
CCQ = VCCQMin  
I
OL = 100 µA  
VOH  
Output High  
Voltage  
VCCQ  
0.1V  
VCCQ  
VCCQ  
VCC = VCCMin  
CCQ = VCCQMin  
V
0.1V  
0.1V  
IOH = –100 µA  
VPPLK VPP Lock-Out  
Voltage  
2
1.5  
2.7  
1.5  
3.6  
1.5  
1.5  
3.3  
Complete Write  
Protection  
VPP1 VPP during  
VPP2 Program and  
VPP3 Erase Operations  
VPP4  
2
2
2
V
V
V
V
V
2.7  
2.85  
2.7  
2,5 11.4 12.6 11.4 12.6 11.4 12.6  
VLKO VCC Prog/Erase  
Lock Voltage  
1.5  
1.5  
1.5  
VLKO2 VCCQ Prog/Erase  
Lock Voltage  
1.2  
1.2  
1.2  
V
NOTES:  
1. All currents are in RMS unless otherwise noted. Typical values at normal VCC, T = +25 °C.  
2. ICCES is specified with device deselected. If device is read while in erase suspend, current draw is sum of ICCES and ICCR  
3. Erases and program operations are inhibited when VPP VPPLK, and not guaranteed outside the valid VPP ranges of VPPH1  
and VPPH2  
.
.
4. Sampled, not 100% tested.  
5. Automatic Power Savings (APS) reduces ICCR to approximately standby levels, in static operation.  
6. Applying VPP = 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks  
and 2500 cycles on the parameter blocks. V may be connected to 12 V for a total of 80 hours maximum.  
PP  
7. The specification is the sum of VCC and VCCQ currents.  
31  
PRODUCT PREVIEW  
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