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10AS066K4F40E3SG 参数 Datasheet PDF下载

10AS066K4F40E3SG图片预览
型号: 10AS066K4F40E3SG
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 660000-Cell, CMOS, PBGA1517, 40 X 40 MM, ROHS COMPLIANT, FBGA-1517]
分类和应用: 可编程逻辑
文件页数/大小: 110 页 / 1391 K
品牌: INTEL [ INTEL ]
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A10-DATASHEET  
2015.12.31  
45  
External Temperature Sensing Diode Specifications  
Related Information  
Transfer Function for Internal TSD  
Provides the transfer function for the internal TSD.  
External Temperature Sensing Diode Specifications  
Table 44: External Temperature Sensing Diode Specifications for Arria 10 Devices—Preliminary  
The typical value is at 25°C.  
Diode accuracy improves with lower injection current.  
Absolute accuracy is dependent on third party external diode ADC and integration specifics.  
Description  
Min  
10  
Typ  
Max  
100  
0.9  
< 1  
Unit  
μA  
V
Ibias, diode source current  
Vbias, voltage across diode  
Series resistance  
0.3  
Ω
Diode ideality factor  
1.03  
Internal Voltage Sensor Specifications  
Table 45: Internal Voltage Sensor Specifications for Arria 10 Devices—Preliminary  
Parameter  
Minimum  
Typical  
Maximum  
Unit  
Resolution  
0.1  
6
500  
1
Bit  
Ksps  
LSB  
LSB  
%
Sampling rate  
Differential non-linearity (DNL)  
Integral non-linearity (INL)  
Gain error  
1
1
Offset error  
1
LSB  
pF  
Input capacitance  
Clock frequency  
20  
11  
MHz  
Arria 10 Device Datasheet  
Send Feedback  
Altera Corporation  
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