欢迎访问ic37.com |
会员登录 免费注册
发布采购

S29GL128P90TFIR10 参数 Datasheet PDF下载

S29GL128P90TFIR10图片预览
型号: S29GL128P90TFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: [High Performance Page Mode]
分类和应用: PC光电二极管内存集成电路闪存
文件页数/大小: 82 页 / 904 K
品牌: INFINEON [ Infineon ]
 浏览型号S29GL128P90TFIR10的Datasheet PDF文件第70页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第71页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第72页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第73页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第75页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第76页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第77页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第78页  
S29GL01GP  
S29GL512P  
S29GL256P  
S29GL128P  
Device Geometry Definition  
Addresses  
(x16)  
Addresses (x8)  
Data  
Description  
001Bh  
001Ah  
0019h  
0018h  
Device Size = 2N byte  
1B = 1 Gb, 1A= 512 Mb, 19 = 256 Mb, 18 = 128 Mb  
27h  
4Eh  
28h  
29h  
50h  
52h  
0002h  
0000h  
Flash Device Interface description (refer to CFI publication 100)  
2Ah  
2Bh  
54h  
56h  
0006h  
0000h  
Max. number of byte in multi-byte write = 2N  
(00h = not supported)  
Number of Erase Block Regions within device (01h = uniform device, 02h =  
boot device)  
2Ch  
58h  
0001h  
Erase Block Region 1 Information  
(refer to the CFI specification or CFI publication 100)  
00FFh, 0003h, 0000h, 0002h =1 Gb  
00FFh, 0001h, 0000h, 0002h = 512 Mb  
00FFh, 0000h, 0000h, 0002h = 256 Mb  
007Fh, 0000h, 0000h, 0002h = 128 Mb  
2Dh  
2Eh  
2Fh  
30h  
5Ah  
5Ch  
5Eh  
60h  
00xxh  
000xh  
0000h  
000xh  
31h  
32h  
33h  
34h  
62h  
64h  
66h  
68h  
0000h  
0000h  
0000h  
0000h  
Erase Block Region 2 Information (refer to CFI publication 100)  
Erase Block Region 3 Information (refer to CFI publication 100)  
Erase Block Region 4 Information (refer to CFI publication 100)  
35h  
36h  
37h  
38h  
6Ah  
6Ch  
6Eh  
70h  
0000h  
0000h  
0000h  
0000h  
39h  
3Ah  
3Bh  
3Ch  
72h  
74h  
76h  
78h  
0000h  
0000h  
0000h  
0000h  
Document Number: 002-00886 Rev. *B  
Page 74 of 83  
 复制成功!