S29GL01GP
S29GL512P
S29GL256P
S29GL128P
System Interface String
Addresses
(x16)
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
Addresses (x8)
Data
Description
36h
38h
3Ah
3Ch
3Eh
40h
42h
0027h
0036h
0000h
0000h
0006h
0006h
0009h
V
CC Min. (write/erase) D7–D4: volt, D3–D0: 100 mV
VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 mV
VPP Min. voltage (00h = no VPP pin present)
VPP Max. voltage (00h = no VPP pin present)
Typical timeout per single byte/word write 2N µs
Typical timeout for buffer write 2N µs (00h = not supported)
Typical timeout per individual block erase 2N ms
0013h = 1 Gb
0012h = 512 Mb
0011h = 256 Mb
0010h = 128 Mb
22h
44h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
24h
25h
26h
46h
48h
4Ah
4Ch
0003h
0005h
0003h
0002h
Max. timeout for byte/word write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
Document Number: 002-00886 Rev. *B
Page 73 of 83
INFINEON [ Infineon ]
