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IRLMS1902TRPBF 参数 Datasheet PDF下载

IRLMS1902TRPBF图片预览
型号: IRLMS1902TRPBF
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6]
分类和应用: 开关脉冲光电二极管晶体管
文件页数/大小: 8 页 / 194 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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100
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.75V
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
10
10
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.75V
TOP
1
1
1.75V
0.1
0.1
1.75V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25
°
C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 2.2A
I
D
, Drain-to-Source Current (A)
1.5
T
J
= 150
°
C
1.0
1
0.5
0.1
1.5
V DS = 10V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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