PD - 95359
HEXFET
®
Power MOSFET
l
l
l
l
l
Generation V Technology
Micro6 Package Style
Ultra Low
R
DS(on)
N-Channel MOSFET
Lead-Free
D
D
G
1
6
A
D
D
S
V
DSS
= 20V
R
DS(on)
= 0.10Ω
2
5
3
4
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET
®
power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6™ package with its customized leadframe
produces a HEXFET
®
power MOSFET with R
DS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
DS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Description
Top View
Micro6™
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
3.2
2.6
18
1.7
13
± 12
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Min.
Typ.
Max
75
Units
°C/W
www.irf.com
1
1/18/05
INFINEON [ INFINEON TECHNOLOGIES AG ]
