Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min. Typ. Max. Units
Conditions
20
V
V
GS
= 0V, I
D
= 250µA
0.032 V/°C Reference to 25°C, I
D
= 1mA
0.10
V
GS
= 4.5V, I
D
= 2.2A
Ω
0.17
V
GS
= 2.7V, I
D
= 1.1A
0.70
V
V
DS
= V
GS
, I
D
= 250µA
3.2
S
V
DS
= 10V, I
D
= 1.1A
1.0
V
DS
= 16V, V
GS
= 0V
µA
25
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 12V
nA
-100
V
GS
= -12V
4.7 7.0
I
D
= 2.2A
0.97 1.5
nC V
DS
= 16V
1.8 2.6
V
GS
= 4.5V, See Fig. 6 and 9
7.0
V
DD
= 10V
11
I
D
= 2.2A
ns
12
R
G
= 6.0Ω
4.0
R
D
= 4.4Ω, See Fig. 10
300
V
GS
= 0V
120
pF
V
DS
= 15V
50
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
40
37
1.7
18
1.2
60
55
V
ns
nC
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.2A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
5sec.
I
SD
≤
2.2A, di/dt
≤
110A/µs, V
DD
≤
V
(BR)DSS
,
2
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