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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Diagnostic functions  
7.3  
SENSE signal in nominal current range  
Figure 21 shows the current sense as a function of the load current in the power DMOS. Usually, a pull-down  
resistor RIS is connected to the current sense IS pin. This resistor has to be higher than 560 Ω to limit the power  
losses in the sense circuitry. A typical value is 1.2 kΩ. The blue curve represents the ideal sense current,  
assuming an ideal kILIS factor value. The red curves shows the accuracy the device provides across full  
temperature range at a defined current.  
Figure 21  
Current sense for nominal load  
7.3.1  
SENSE signal variation as a function of temperature and load  
current  
In some applications a better accuracy is required at smaller currents. To achieve this accuracy requirement, a  
calibration on the application is possible. To avoid multiple calibration points at different load and temperature  
conditions, the BTT6200-4ESA allows limited derating of the kILIS value, at a given point (IL3; TJ = +25°C). This  
derating is described by the parameter ΔkILIS. Figure 22 shows the behavior of the sense current, assuming one  
calibration point at nominal load at +25°C.  
The blue line indicates the ideal kILIS ratio.  
The green lines indicate the derating on the parameter across temperature and voltage, assuming one  
calibration point at nominal temperature and nominal battery voltage.  
The red lines indicate the kILIS accuracy without calibration.  
Datasheet  
28  
Rev. 1.00  
2019-03-09  
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