BTS7040-1EPA
PROFET™ +2 12V
Protection
-VBA T(REV)
High-side
Channel
VS
IDI
Microcontroller
DO
DI
RDI
ReverseON
OUT
-IL
GND
IS
GND
L, C, R
-IIS
-IGND
Protection_RevBatt_HEAT.emf
Figure 31 Reverse Battery Protection (application example)
8.4.2
Overvoltage Protection
In the case of supply voltages between VS(EXT,UP) and VBAT(LD), the output transistor is still operational and
follows the input pin. In addition to the output clamp for inductive loads as described in Chapter 7.2.2, there
is a clamp mechanism available for Overvoltage protection for the logic and the output channel, monitoring
the voltage between VS and GND pins (VS(CLAMP)).
8.5
Protection against loss of connection
8.5.1
Loss of Battery and Loss of Load
The loss of connection to battery or to the load has no influence on device robustness when load and wire
harness are purely resistive. In case of driving an inductive load, the energy stored in the inductance must be
handled. PROFET™ +2 12V devices can handle the inductivity of the wire harness up to 10 µH with IL(NOM). In
case of applications where currents and/or the aforementioned inductivity are exceeded, an external
suppressor diode (like diode DZ2 shown in Chapter 10) is recommended to handle the energy and to provide
a well-defined path to the load current.
8.5.2
Loss of Ground
In case of loss of device ground, it is recommended to have a resistor connected between any Digital Input pin
and the microcontroller to ensure a channel switch OFF (as described in Chapter 10).
Note:
In case any Digital Input pin is pulled to ground (either by a resistor or active) a parasitic ground
path is available, which could keep the device operational during loss of device ground.
Data Sheet
38
Rev. 1.10
2020-12-14
INFINEON [ Infineon ]
