BTS 3410 G
Electrical Characteristics
Parameter
Symbol
Values
typ. max.
Unit
at T = 25°C, unless otherwise specified
min.
Dynamic Characteristics
-
-
-
-
45
60
100
100
1.5
1.5
Turn-on time
V to 90% I :
t
on
µs
IN
D
R = 4.7 ꢀ, V = 0 to 10 V, V = 12 V
L
IN
bb
Turn-off time
V to 10% I :
t
off
IN
D
R = 4.7 ꢀ, V = 10 to 0 V, V = 12 V
L
IN
bb
0.4
0.6
Slew rate on
70 to 50% V :
-dV /dt
V/µs
bb
DS on
R = 4.7 ꢀ, V = 0 to 10 V, V = 12 V
L
IN
bb
Slew rate off
50 to 70% V :
dV /dt
DS off
bb
R = 4.7 ꢀ, V = 10 to 0 V, V = 12 V
L
IN
bb
1)
Protection Functions
150
175
10
-
-
°C
K
Thermal overload trip temperature
Thermal hysteresis
Input current protection mode
Input current protection mode
T
jt
2)
-
25
-
ꢂT
jt
IN(Prot)
I
50
40
300 µA
300
I
IN(Prot)
T = 150 °C
Unclamped single pulse inductive energy
each channel
j
2)
150
-
-
-
mJ
V
E
AS
I = 0.9 A, T = 25 °C, V = 12 V
D
j
bb
Inverse Diode
Inverse diode forward voltage
I = 7 A, t = 250 µs, V = 0 V,
V
-
1
SD
F
m
IN
t = 300 µs
P
1
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2
not subject to production test, specified by design
Page 5
2004-03-05
INFINEON [ Infineon ]
