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BTS3410G 参数 Datasheet PDF下载

BTS3410G图片预览
型号: BTS3410G
PDF下载: 下载PDF文件 查看货源
内容描述: 智能双电源开关Lowside [Smart Dual Lowside Power Switch]
分类和应用: 外围驱动器驱动程序和接口开关接口集成电路电源开关光电二极管PC
文件页数/大小: 11 页 / 318 K
品牌: INFINEON [ Infineon ]
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BTS 3410 G  
Electrical Characteristics  
Parameter  
Symbol  
Values  
typ. max.  
Unit  
at T = 25°C, unless otherwise specified  
min.  
42  
-
j
Characteristics  
Drain source clamp voltage  
-
55  
10  
V
V
DS(AZ)  
T = - 40 ...+ 150, I = 10 mA  
j
D
1.5  
µA  
V
Off-state drain current Tj = -40 ... +150°C  
= 32 V, V = 0 V  
I
DSS  
V
DS  
IN  
Input threshold voltage  
I = 0.3 mA, T = 25 °C  
V
IN(th)  
1.3  
0.8  
-
1.7  
-
2.2  
-
D
j
I = 0.3 mA, T = 150 °C  
D
j
10  
30  
µA  
mꢀ  
On state input current  
On-state resistance  
I
IN(on)  
R
DS(on)  
V = 5 V, I = 1.4 A, T = 25 °C  
-
-
190  
350  
240  
480  
IN  
D
j
V = 5 V, I = 1.4 A, T = 150 °C  
IN  
D
j
On-state resistance  
V = 10 V, I = 1.4 A, T = 25 °C  
R
DS(on)  
-
-
150  
280  
200  
400  
IN  
D
j
V = 10 V, I = 1.4 A, T = 150 °C  
IN  
D
j
5)  
A
Nominal load current per channel  
= 0.5 V, T < 150°C, V = 10 V, T = 85 °C,  
I
D(Nom)  
V
DS  
j
IN  
A
one channel on  
both channels on  
1.3  
1
1.65  
1.3  
-
-
2)  
5
7.5  
10  
Current limit (active if V >2.5 V)  
I
D(lim)  
DS  
V = 10 V, V = 12 V, t = 200 µs  
IN  
DS  
m
1
2
not subject to production test, specified by design  
Device switched on into existing short circuit (see diagram Determination of I  
). If the device is in on condition  
D(lim)  
and a short circuit occurs, these values might be exceeded for max. 50 µs.  
5
not subject to production test, calculated by R  
and R  
THJA  
ds(on)  
Page 4  
2004-03-05