ꢀ
HITFET ꢁ BTS 3410 G
Smart Dual Lowside Power Switch
Features
Product Summary
S Logic Level Input
S Input Protection (ESD)
S Thermal shutdown with
auto restart
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
V
R
42
200 mꢀ
1.3
150 mJ
V
DS
I
A
E
AS
S Overload protection
S Short circuit protection
S Overvoltage protection
S Current limitation
S Analog driving possible
Application
S All kinds of resistive, inductive and capacitive loads in switching
or linear applications
S µC compatible power switch for 12 V DC applications
S Replaces electromechanical relays and discrete circuits
General Description
ꢁ
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Vbb
M
Drain1
ꢀ
HITFET
Pin 7and 8
In1
Logic
Pin 2
Channel 1
Pin 1
Source1
Drain2
Pin 5and 6
In2
Logic
Pin 4
Channel 2
Pin 3
Source2
Complete product spectrum and additional information http://www.infineon.com/hitfet
Page 1
2004-03-05
INFINEON [ Infineon ]
