BTS 3410 G
1 Overall maximum allowable power
dissipation; P = f(T ) resp.
2 On-state resistance
R
= f(T ); I =1.4A; V =10V
tot
tot
S
ON
j
D
IN
P
= f(T ) @ R
=80 K/W
A
thJA
3
500
mꢀ
W
max.
typ.
400
T
S
350
300
250
200
150
100
50
2
1.5
1
T
A
0.5
0
0
-50 -25
0
25
50
75 100
150
°C
-50 -25
0
25 50 75 100 125
175
°C
T
T
j
j
3 On-state resistance
4 Typ. input threshold voltage
R
= f(T ); I = 1.4A; V =5V
V
= f(T ); I = 0.15 mA; V = 12V
ON
j
D
IN
IN(th)
j
D
DS
500
2
max.
typ.
mꢀ
V
400
1.6
1.4
1.2
1
350
300
250
200
150
100
50
0.8
0.6
0.4
0.2
0
0
°C
-50 -25
0
25 50 75 100 125
175
°C
-50 -25
0
25
50
75 100
150
T
T
j
j
Page 7
2004-03-05
INFINEON [ Infineon ]
