欢迎访问ic37.com |
会员登录 免费注册
发布采购

BTN8982TA 参数 Datasheet PDF下载

BTN8982TA图片预览
型号: BTN8982TA
PDF下载: 下载PDF文件 查看货源
内容描述: 高电流PN半桥 [High Current PN Half Bridge]
分类和应用: 外围驱动器驱动程序和接口接口集成电路PC
文件页数/大小: 26 页 / 1871 K
品牌: INFINEON [ Infineon ]
 浏览型号BTN8982TA的Datasheet PDF文件第18页浏览型号BTN8982TA的Datasheet PDF文件第19页浏览型号BTN8982TA的Datasheet PDF文件第20页浏览型号BTN8982TA的Datasheet PDF文件第21页浏览型号BTN8982TA的Datasheet PDF文件第23页浏览型号BTN8982TA的Datasheet PDF文件第24页浏览型号BTN8982TA的Datasheet PDF文件第25页浏览型号BTN8982TA的Datasheet PDF文件第26页  
High Current PN Half Bridge  
BTN8982TA  
Application Information  
6
Application Information  
Note:The following information is given as a hint for the implementation of the device only and shall not be  
regarded as a description or warranty of a certain functionality, condition or quality of the device.  
6.1  
Application Circuit  
Reverse Polarity  
Protection  
Microcontroller  
Voltage Regulator  
(IPD90P03P4L-04)  
I/O  
Reset  
Vdd  
WO  
TLE  
4278G  
XC866  
RO  
Q
I
VS  
L1  
DZ1  
10V  
CI  
470nF  
C
22µF  
Q
D
GND  
Vss  
C1  
R
3
CD  
47nF  
A/D I/O I/O I/O A/D  
100nF  
10kΩ  
optional  
R12  
10kΩ  
R22  
10kΩ  
BTN8982TA  
BTN8982TA  
VS  
VS  
C1O 2V  
220nF  
C2 O2V  
220nF  
C
R21  
10kΩ  
10  
R
10kΩ  
11  
INH  
IN  
INH  
1000µF  
OUT  
OUT  
IN  
M
C
100nF  
19  
IS  
IS  
C1OUT  
C2OUT  
C29  
R112  
1k Ω  
R212  
1kΩ  
220nF  
220nF 100nF  
SR  
SR  
C
1nF  
1IS  
C
1nF  
2IS  
GND  
GND  
C12  
100nF  
R111  
0..51kΩ  
R
C22  
100nF  
211  
0..51kΩ  
Figure 16 Application Circuit: H-Bridge with two BTN8982TA  
Note:This is a simplified example of an application circuit. The function must be verified in the real application.  
6.2  
Layout Considerations  
Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances  
have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The  
BTN8982TA has no separate pin for power ground and logic ground. Therefore it is recommended to assure that  
the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of  
the device (GND / pin 1) is minimized. If the BTN8982TA is used in a H-bridge or B6 bridge design, the voltage  
offset between the GND pins of the different devices should be small as well.  
Due to the fast switching behavior of the device in current limitation mode a low ESR electrolytic capacitor C10 from  
VS to GND is necessary. This prevents destructive voltage peaks and drops on VS. This is needed for both PWM  
and non PWM controlled applications. To assure efficiency of C10 and C19/ C29 the stray inductance must be low.  
Therefore the capacitors must be placed very close to the device pins. The value of the capacitors must be verified  
in the real application, taking care for low ripple and transients at the Vs pin of the BTN8982TA.  
The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series  
resistors greater than 7kΩ.  
Data Sheet  
22  
Rev. 1.0, 2013-05-17  
 复制成功!