欢迎访问ic37.com |
会员登录 免费注册
发布采购

IS61C512-15N 参数 Datasheet PDF下载

IS61C512-15N图片预览
型号: IS61C512-15N
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×8高速CMOS静态RAM [64K x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 425 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
 浏览型号IS61C512-15N的Datasheet PDF文件第1页浏览型号IS61C512-15N的Datasheet PDF文件第3页浏览型号IS61C512-15N的Datasheet PDF文件第4页浏览型号IS61C512-15N的Datasheet PDF文件第5页浏览型号IS61C512-15N的Datasheet PDF文件第6页浏览型号IS61C512-15N的Datasheet PDF文件第7页浏览型号IS61C512-15N的Datasheet PDF文件第8页  
IS61C512  
PIN CONFIGURATION  
32-Pin DIP and SOJ  
PIN CONFIGURATION  
32-Pin TSOP-1  
NC  
NC  
A14  
A12  
A7  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
VCC  
A15  
CE2  
WE  
A13  
A8  
A11  
A9  
A8  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
2
2
A10  
CE1  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
3
3
4
A13  
WE  
CE2  
A15  
VCC  
NC  
NC  
A14  
A12  
A7  
4
5
5
A6  
6
6
A5  
7
A9  
7
A4  
8
A11  
OE  
8
A3  
9
9
A2  
10  
11  
12  
13  
14  
15  
16  
A10  
CE1  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
10  
11  
12  
13  
14  
15  
16  
A1  
A0  
I/O0  
I/O1  
I/O2  
GND  
A6  
A5  
A4  
A1  
A2  
A3  
PIN DESCRIPTIONS  
A0-A15  
Address Inputs  
CE1  
Chip Enable 1 Input  
Chip Enable 2 Input  
Output Enable Input  
Write Enable Input  
Input/Output  
CE2  
OE  
WE  
I/O0-I/O7  
Vcc  
GND  
Power  
Ground  
TRUTH TABLE  
Mode  
WE  
CE1  
CE2  
OE  
I/O Operation  
Vcc Current  
Not Selected  
(Power-down)  
X
X
H
X
X
L
X
X
High-Z  
High-Z  
ISB1, ISB2  
ISB1, ISB2  
Output Disabled  
Read  
Write  
H
H
L
L
L
L
H
H
H
H
L
X
High-Z  
DOUT  
DIN  
ICC1, ICC2  
ICC1, ICC2  
ICC1, ICC2  
Notes:  
ABSOLUTE MAXIMUM RATINGS(1)  
1. Stress greater than those listed  
under ABSOLUTE MAXIMUM  
RATINGS may cause permanent  
damage to the device. This is a  
stress rating only and functional  
operation of the device at these or  
any other conditions above those  
indicated in the operational sec-  
tions of this specification is not  
implied. Exposure to absolute  
maximum rating conditions for ex-  
tended periods may affect reliabil-  
ity.  
Symbol Parameter  
Value  
Unit  
V
°C  
°C  
W
VTERM  
TBIAS  
TSTG  
PT  
Terminal Voltage with Respect to GND  
–0.5 to +7.0  
–10 to +85  
–65 to +150  
1.5  
Temperature Under Bias  
Storage Temperature  
Power Dissipation  
IOUT  
DC Output Current (LOW)  
20  
mA  
2
Integrated Circuit Solution Inc.  
SR011-0B