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IC61LV5128-12T 参数 Datasheet PDF下载

IC61LV5128-12T图片预览
型号: IC61LV5128-12T
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8高速CMOS静态RAM [512K x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用:
文件页数/大小: 9 页 / 157 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
 浏览型号IC61LV5128-12T的Datasheet PDF文件第1页浏览型号IC61LV5128-12T的Datasheet PDF文件第2页浏览型号IC61LV5128-12T的Datasheet PDF文件第4页浏览型号IC61LV5128-12T的Datasheet PDF文件第5页浏览型号IC61LV5128-12T的Datasheet PDF文件第6页浏览型号IC61LV5128-12T的Datasheet PDF文件第7页浏览型号IC61LV5128-12T的Datasheet PDF文件第8页浏览型号IC61LV5128-12T的Datasheet PDF文件第9页  
IC61LV5128  
PIN CONFIGURATION  
36-Pin SOJ  
PIN CONFIGURATION  
44-Pin TSOP-2  
A0  
A1  
1
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
NC  
NC  
NC  
A0  
A1  
A2  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
NC  
NC  
NC  
2
A18  
A17  
A16  
A15  
OE  
2
3
A2  
3
4
A18  
A17  
A16  
A15  
OE  
I/O7  
I/O6  
GND  
Vcc  
I/O5  
I/O4  
A14  
A13  
A12  
A11  
A10  
NC  
A3  
4
5
A4  
5
A3  
A4  
6
CE  
6
7
CE  
I/O0  
I/O1  
Vcc  
GND  
I/O2  
I/O3  
WE  
A5  
A6  
A7  
A8  
A9  
8
I/O0  
I/O1  
Vcc  
GND  
I/O2  
I/O3  
WE  
A5  
7
I/O7  
I/O6  
GND  
Vcc  
I/O5  
I/O4  
A14  
A13  
A12  
A11  
A10  
NC  
9
8
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
A6  
A7  
NC  
NC  
NC  
NC  
A8  
A9  
TRUTH TABLE  
PIN DESCRIPTIONS  
Mode  
WE  
CE  
OE  
I/O Operation Vcc Current  
A0-A18  
Address Inputs  
Not Selected  
(Power-down)  
X
H
X
High-Z  
ISB1, ISB2  
CE  
Chip Enable Input  
Output Enable Input  
Write Enable Input  
Input/Output  
OE  
Output Disabled  
Read  
H
H
L
L
L
L
H
L
High-Z  
DOUT  
DIN  
ICC  
ICC  
ICC  
WE  
I/O0-I/O7  
Vcc  
Write  
X
Power  
GND  
NC  
Ground  
No Connection  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameter  
Value  
Unit  
VTERM  
TBIAS  
TSTG  
PD  
Terminal Voltage with Respect to GND  
Temperature Under Bias  
Storage Temperature  
–0.5 to Vcc + 0.5 V  
–55 to +125  
–65 to +150  
1.0  
°C  
°C  
W
Power Dissipation  
Notes:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent  
damage to the device. This is a stress rating only and functional operation of the device at these or any  
other conditions above those indicated in the operational sections of this specification is not implied.  
Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
Integrated Circuit Solution, Inc.  
AHSR021-0A 09/11/2001  
3