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IC61LV5128-12T 参数 Datasheet PDF下载

IC61LV5128-12T图片预览
型号: IC61LV5128-12T
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8高速CMOS静态RAM [512K x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用:
文件页数/大小: 9 页 / 157 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC61LV5128  
512K x 8 HIGH-SPEED CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
The ICSI IC61LV5128 is a very high-speed, low power,  
524,288-word by 8-bit COMS static RAM. The IC61LV5128 is  
fabricated using ICSI's high-performance CMOS technology.  
This highly reliable process coupled with innovative circuit  
design techniques, yields higher preformance and low power  
consumotion devices.  
• High-speed access times:  
— 8, 10, 12 and 15 ns  
• High-preformance, lower-power CMOS process  
• Multiple center power and ground pins for  
greater noise immunity  
• Easy memory expansion with CE and OE  
When CE is HIGH (deselected), the device assumes a standby  
mode at which the power dissipation can be reduced down to  
250 µW (typical) with CMOS input levels.  
options  
CE power-down  
• Fully static operation: no clock or refresh  
reguired  
The IC61LV5128 operates from a single 3.3V power supply and  
all inputs are TTL-compatible.  
• TTL compatible inputs and outputs  
• Single 3.3V ± 10% power supply  
• Packages available:  
The IC61LV5128 is available in 36-pin, 400mil SOJ and 44-pin  
TSOP-2 package.  
— 36-pin 400mil SOJ  
— 44-pin TSOP-2  
FUNCTIONAL BLOCK DIAGRAM  
512K X 8  
MEMORY ARRAY  
A0-A18  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution, Inc.  
2
Integrated Circuit Solution, Inc.  
AHSR021-0A 09/11/2001