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IC-MFN 参数 Datasheet PDF下载

IC-MFN图片预览
型号: IC-MFN
PDF下载: 下载PDF文件 查看货源
内容描述: 8折FAIL -SAFE N沟道场效应管驱动器 [8-FOLD FAIL-SAFE N-FET DRIVER]
分类和应用: 驱动器
文件页数/大小: 13 页 / 197 K
品牌: ICHAUS [ IC-HAUS GMBH ]
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iC-MFN  
8-FOLD FAIL-SAFE N-FET DRIVER  
Rev A2, Page 6/13  
ELECTRICAL CHARACTERISTICS  
Operating Conditions: VB = VBR = 4.5. . . 40 V, GND = GNDR = 0 V, Tj = -40...125 °C unless otherwise stated  
Item Symbol  
No.  
Parameter  
Conditions  
Tj  
°C  
Fig.  
Unit  
Min.  
Typ.  
Max.  
Input IN1...8, EN5, EN10, ENFS  
201 Vc()hi  
202 Vc()lo  
Clamp Voltage hi  
I() = 10 mA  
I() = -10 mA  
42  
-2  
60  
V
V
Clamp Voltage lo referenced to  
the lower voltage of GND, GNDR  
-0.4  
203 Vt()hi  
204 Vt()lo  
205 Vt()hys  
206 Ipd1()  
207 Ipd2()  
208 Cin()  
209 Il()  
Threshold Voltage hi  
Threshold Voltage lo  
Input Hysteresis  
1.15  
0.8  
200  
75  
1.4  
1.05  
400  
350  
70  
V
V
Vt()hys = Vt()hi – Vt()lo  
0.4 V < V() < Vt()hi  
V() > 1.4 V  
mV  
µA  
µA  
pF  
µA  
Pull-Down Current 1  
Pull-Down Current 2  
Input Capacitance  
Leakage Current  
5
5
225  
45  
20  
20  
VB, VBR = 0 V, V() = 0..40 V  
-10  
10  
Supply and Temperature Monitor  
301 VBon  
302 VBoff  
303 VBhys  
304 Toff  
Turn-On Threshold VB  
3.8  
3.4  
4.3  
4.0  
V
V
Turn-Off Threshold VB  
Hysteresis  
Decreasing voltage VB  
VBhys = VBon – VBoff  
Increasing temperature  
Decreasing temperature  
Thys = Toff – Ton  
200  
145  
130  
mV  
°C  
°C  
°C  
Turn-Off Temperature  
Turn-On temperature  
Hysteresis  
160  
147  
13  
180  
170  
305 Ton  
306 Thys  
Ground Monitor GND, GNDR  
401 Vt()hi  
Threshold Voltage hi GND  
Monitor  
Referenced to GNDR  
Referenced to GNDR  
270  
mV  
mV  
402 Vt()lo  
Threshold Voltage lo GND  
Monitor  
50  
5
403 Vt()hys  
404 Vt()hi  
Hysteresis  
Vt()hys = Vt()hi – Vt()lo  
Referenced to GND  
100  
270  
mV  
mV  
Threshold Voltage hi GNDR  
Monitor  
405 Vt()lo  
Threshold Voltage lo GNDR  
Monitor  
Referenced to GND  
50  
mV  
406 Vt()hys  
407 Vc()hi  
Hysteresis  
Vt()hys = Vt()hi – Vt()lo  
I() = 1 mA  
5
100  
2
mV  
V
Clamp Voltage GNDR hi  
referenced to GND  
0.4  
408 Vc()lo  
Clamp Voltage GNDR lo  
referenced to GND  
I() = -1 mA  
-2  
-0.4  
V
Status Output NOK  
501 Vc(NOK)hi Clamp Voltage hi  
I() = 10 mA  
I() = -10 mA  
42  
-2  
60  
V
V
502 Vc(NOK)lo Clamp Voltage lo referenced to  
the lower voltage of GND, GNDR  
-0.4  
503 Il(NOK)  
Leakage Current  
GND < V(NOK) < VB  
-20  
2
20  
µA  
504  
Vs(NOK)lo Saturation Voltage lo referenced  
to GND  
I() = 0.5 mA  
I() = 2 mA  
0.2  
0.8  
V
V
505 Isc(NOK)lo Short circuit current lo  
V() = 0.8 V...VB  
3
10  
mA  
Supply Monitor VB, VBR  
601 Vt(VB)hi  
Threshold Voltage hi VB Monitor Referenced to VBR  
Threshold Voltage lo VB Monitor Referenced to VBR  
270  
mV  
mV  
mV  
mV  
602 Vt(VB)lo  
50  
5
603 Vt(VB)hys Hysteresis  
Vt()hys = Vt()hi – Vt()lo  
Referenced to VB  
100  
270  
604 Vt(VBR)hi Threshold Voltage hi VBR  
Monitor  
605 Vt(VBR)lo Threshold Voltage lo VBR  
Monitor  
Referenced to VB  
50  
606 Vt(VBR)hys Hysteresis  
Vt()hys = Vt()hi – Vt()lo  
5
100  
2
mV  
V
607 Vc(VBR)hi Clamp Voltage hi  
608 Vc(VBR)lo Clamp Voltage lo  
I() = 1 mA, Vc() = V(VBR) - V(VB)  
0.4  
-2  
I() = -1 mA, Vc() = V(VBR) -  
V(VB)  
-0.4  
V
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