iC-MFN
8-FOLD FAIL-SAFE N-FET DRIVER
Rev A2, Page 4/13
ABSOLUTE MAXIMUM RATINGS
Beyond these values damage may occur; device operation is not guaranteed.
Item
No.
Symbol
Parameter
Supply Voltage
Voltage at OUT1...8, NOK
Voltage at IN1...8, EN5, EN10, ENFS
Voltage at GNDR referenced to GND
Voltage at GND referenced to GNDR
Voltage at VBR referenced to VB
Voltage at VB referenced to VBR
Current in OUT1...8, NOK, IN1...8,
EN5, EN10, ENFS
Current in VB, VBR
Current in GND, GNDR
ESD susceptibility at all pins
Operating Junction Temperature
Storage Temperature Range
HBM 100 pF discharged through 1.5 kΩ
-40
-55
Conditions
Min.
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-10
-10
-80
Max.
40
40
40
0.3
0.3
0.3
0.3
10
80
10
2
140
125
V
V
V
V
V
V
V
mA
mA
mA
kV
°C
°C
Unit
G001 VB, VBR
G002 V()
G003 V()
G004 V(GNDR)
G005 V(GND)
G006 V(VBR)
G007 V(VB)
G008 Imx()
G009 Imx()
G010 Imx()
G011 Vd()
G012 Tj
G013 Ts
THERMAL DATA
Operating Conditions: VB = VBR = 4.5. . . 40 V, GND = GNDR = 0 V
Item
No.
T01
T02
Symbol
Ta
Rthja
Parameter
Operating Ambient Temperature Range
Thermal Resistance Chip/Ambient
SMD assembly, no additional cooling areas.
Conditions
Min.
-40
Typ.
Max.
125
75
°C
K/W
Unit
All voltages are referenced to ground unless otherwise stated.
All currents into the device pins are positive; all currents out of the device pins are negative.
ICHAUS [ IC-HAUS GMBH ]
