欢迎访问ic37.com |
会员登录 免费注册
发布采购

IBMN325404CT3B-75H 参数 Datasheet PDF下载

IBMN325404CT3B-75H图片预览
型号: IBMN325404CT3B-75H
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 66 页 / 1699 K
品牌: IBM [ IBM ]
 浏览型号IBMN325404CT3B-75H的Datasheet PDF文件第18页浏览型号IBMN325404CT3B-75H的Datasheet PDF文件第19页浏览型号IBMN325404CT3B-75H的Datasheet PDF文件第20页浏览型号IBMN325404CT3B-75H的Datasheet PDF文件第21页浏览型号IBMN325404CT3B-75H的Datasheet PDF文件第23页浏览型号IBMN325404CT3B-75H的Datasheet PDF文件第24页浏览型号IBMN325404CT3B-75H的Datasheet PDF文件第25页浏览型号IBMN325404CT3B-75H的Datasheet PDF文件第26页  
IBMN325164CT3 IBMN325804CT3  
IBMN325404CT3  
256Mb Synchronous DRAM - Die Revision B  
Preliminary  
Burst Read Followed by the Precharge Command  
(Burst Length = 4, CAS Latency = 3)  
T6 T7 T8  
T0  
T1  
T2  
T3  
T4  
T5  
CK  
READ Ax  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Precharge A  
COMMAND  
0
*
t
RP  
CAS latency = 3  
DOUT Ax  
DOUT Ax  
DOUT Ax  
2
DOUT Ax  
3
0
1
tCK2, DQs  
Bank A can be reactivated at completion of t  
.
RP  
*
t
is a function of clock cycle and speed sort.  
RP  
Burst Write Followed by the Precharge Command  
(Burst Length = 2, CAS Latency = 2)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CK  
Activate  
Bank Ax  
NOP  
NOP  
NOP  
Precharge A  
NOP  
NOP  
NOP  
WRITE Ax  
COMMAND  
0
t ‡  
DPL  
t ‡  
RP  
*
CAS latency = 2  
t
CK2, DQs  
DIN Ax  
DIN Ax  
0
1
Bank can be reactivated at completion of t  
.
RP  
*
‡ t  
and t are functions of clock cycle and speed sort.  
DPL  
RP  
See the Clock Frequency and Latency table.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0608.F39375A  
10/00  
Page 22 of 66  
 复制成功!