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IBMN325404CT3B-75H 参数 Datasheet PDF下载

IBMN325404CT3B-75H图片预览
型号: IBMN325404CT3B-75H
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 66 页 / 1699 K
品牌: IBM [ IBM ]
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IBMN325164CT3  
IBMN325404CT3  
IBMN325804CT3  
256Mb Synchronous DRAM - Die Revision B  
Preliminary  
Burst write operations will be terminated by the Precharge command. The last write data that will be properly  
stored in the device is that write data that is presented to the device a number of clock cycles prior to the Pre-  
charge command equal to the Data-in to Precharge delay, t  
.
DPL  
Precharge Termination of a Burst Write  
(Burst Length = 8, CAS Latency = 2, 3)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CK  
NOP  
NOP  
NOP  
NOP  
Precharge A  
NOP  
NOP  
NOP  
WRITE Ax  
COMMAND  
DQM  
0
t
DPL  
CAS latency = 2  
tCK2, DQs  
DIN Ax  
DIN Ax  
DIN Ax  
DIN Ax  
DIN Ax  
DIN Ax  
0
1
2
t
DPL  
CAS latency = 3  
tCK3, DQs  
0
1
2
t  
is an asynchronous timing and may be completed in one or two clock cycles  
DPL  
depending on clock cycle time.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0608.F39375A  
10/00  
Page 24 of 66  
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