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IBMN312404CT3B-75H 参数 Datasheet PDF下载

IBMN312404CT3B-75H图片预览
型号: IBMN312404CT3B-75H
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 66 页 / 2855 K
品牌: IBM [ IBM ]
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IBMN312164CT3  
IBMN312804CT3  
IBMN312404CT3  
Preliminary  
128Mb Synchronous DRAM - Die Revision B  
Write Interrupted by a Read  
A Read Command will interrupt a burst write operation on the same clock cycle that the Read Command is  
registered. The DQs must be in the high impedance state at least one cycle before the interrupting read data  
appears on the outputs to avoid data contention. When the Read Command is registered, any residual data  
from the burst write cycle will be ignored. Data that is presented on the DQ pins before the Read Command  
is initiated will actually be written to the memory.  
Minimum Write to Read Interval  
(Burst Length = 4, CAS latency = 2, 3)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CK  
WRITE A  
READ B  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
CAS latency = 2  
DIN A  
0
DOUT B  
0
DOUT B  
DOUT B  
DOUT B  
DOUT B  
DOUT B  
DOUT B  
1
2
3
tCK2, DQs  
CAS latency = 3  
DIN A  
0
DOUT B  
3
0
1
2
tCK3, DQs  
: “H” or “L”  
Input data for the Write is masked.  
Input data must be removed from the DQs at least one clock  
cycle before the Read data appears on the outputs to avoid  
data contention.  
©IBM Corporation. All rights reserved.  
06K7582.H03335A  
01/01  
Use is further subject to the provisions at the end of this document.  
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