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IBMB3N16644JCB-75AT 参数 Datasheet PDF下载

IBMB3N16644JCB-75AT图片预览
型号: IBMB3N16644JCB-75AT
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 18 页 / 315 K
品牌: IBM [ IBM ]
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IBMB3N16644JCB  
IBMB3N16734JCB  
Preliminary  
16M x 64/72 One-Bank Unbuffered SDRAM Module  
AC Characteristics (TA= 0 to +70°C, VDD= 3.3V ± 0.3V)  
1. An initial pause of 200µs, with DQMB0-7 and CKE0 held high, is required after power-up. A Precharge All  
Banks command must be given followed by a minimum of eight Auto (CBR) Refresh cycles before or after  
the Mode Register Set operation.  
2. The Transition time is measured between V and V (or between V and V ).  
IH  
IL  
IL  
IH  
3. In addition to meeting the transition rate specification, the CK0, CK2, and CKE0 signals must transit  
between V and V (or between V and V ) in a monotonic manner.  
IH  
IL  
IL  
IH  
4. AC timing tests have V = 0.8 V and V = 2.0 V with the timing referenced to the 1.40V crossover point.  
IL  
IH  
5. AC measurements assume t =1.2 ns.  
T
AC Characteristics Diagrams  
t
T
t
CKH  
V
IH  
1.4V  
Clock  
Input  
t
CKL  
V
IL  
t
SETUP  
Output  
t
HOLD  
Zo = 50Ω  
50pF  
1.4V  
AC Output Load Circuit  
t
OH  
t
AC  
t
LZ  
1.4V  
Output  
75H2785.H42054  
11/00  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
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