欢迎访问ic37.com |
会员登录 免费注册
发布采购

IBMB3N16644JCB-75AT 参数 Datasheet PDF下载

IBMB3N16644JCB-75AT图片预览
型号: IBMB3N16644JCB-75AT
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 18 页 / 315 K
品牌: IBM [ IBM ]
 浏览型号IBMB3N16644JCB-75AT的Datasheet PDF文件第10页浏览型号IBMB3N16644JCB-75AT的Datasheet PDF文件第11页浏览型号IBMB3N16644JCB-75AT的Datasheet PDF文件第12页浏览型号IBMB3N16644JCB-75AT的Datasheet PDF文件第13页浏览型号IBMB3N16644JCB-75AT的Datasheet PDF文件第15页浏览型号IBMB3N16644JCB-75AT的Datasheet PDF文件第16页浏览型号IBMB3N16644JCB-75AT的Datasheet PDF文件第17页浏览型号IBMB3N16644JCB-75AT的Datasheet PDF文件第18页  
IBMB3N16644JCB  
IBMB3N16734JCB  
16M x 64/72 One-Bank Unbuffered SDRAM Module  
Preliminary  
Presence Detect Read and Write Cycle  
Symbol  
Parameter  
Min.  
Max.  
100  
100  
3.5  
Units  
Notes  
f
SCL Clock Frequency  
kHZ  
ns  
µs  
µs  
µs  
µs  
µs  
µs  
µs  
ns  
µs  
ns  
µs  
ns  
ms  
SCL  
T
Noise Suppression Time Constant at SCL, SDA Inputs  
SCL Low to SDA Data Out Valid  
Time the Bus Must Be Free before a New Transmission Can Start  
Start Condition Hold Time  
I
t
0.3  
4.7  
4.0  
4.7  
4.0  
4.7  
0
AA  
t
BUF  
t
HD:STA  
t
Clock Low Period  
LOW  
t
Clock High Period  
HIGH  
t
Start Condition Setup Time (for a Repeated Start Condition)  
Data in Hold Time  
SU:STA  
t
HD:DAT  
t
Data in Setup Time  
250  
SU:DAT  
t
SDA and SCL Rise Time  
1
r
t
SDA and SCL Fall Time  
300  
f
t
Stop Condition Setup Time  
4.7  
SU:STO  
t
Data Out Hold Time  
300  
DH  
t
1
Write Cycle Time  
15  
WR  
1. The Write cycle time (t ) is the time from a valid stop condition of a write sequence to the end of the internal Erase/Program  
WR  
cycle. During the Write cycle, the bus interface circuits are disabled, SDA is allowed to remain high per the bus-level pull-up resis-  
tor, and the device does not respond to its slave address.  
75H2785.H42054  
11/00  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
Page 14 of 18  
 复制成功!