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IBM25PPC750GXECB5H83T 参数 Datasheet PDF下载

IBM25PPC750GXECB5H83T图片预览
型号: IBM25PPC750GXECB5H83T
PDF下载: 下载PDF文件 查看货源
内容描述: [RISC Microprocessor, 32-Bit, 933MHz, CMOS, CBGA292, 21 X 21 MM, 1 MM PITCH, CERAMIC, BGA-292]
分类和应用: 时钟外围集成电路
文件页数/大小: 74 页 / 1054 K
品牌: IBM [ IBM ]
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Datasheet  
IBM PowerPC 750GX RISC Microprocessor  
DD1.X  
3. Electrical and Thermal Characteristics  
This section provides AC and DC electrical specifications and thermal characteristics for the 750GX.  
3.1 DC Electrical Characteristics  
The tables in this section describe the DC electrical characteristics for the 750GX.  
Table 3-1. Absolute Maximum Ratings 1  
Characteristic  
Core supply voltage  
PLL supply voltage  
60x bus supply voltage  
Input voltage  
Symbol  
1.8 V  
2.5 V  
3.3 V  
Unit  
V
Notes  
3, 4  
V
-0.3 to 1.6  
-0.3 to 1.6  
-0.3 to 2.0  
-0.3 to 2.0  
-55 to 150  
-0.3 to 1.6  
-0.3 to 1.6  
-0.3 to 2.75  
-0.3 to 2.75  
-55 to 150  
-0.3 to 1.6  
-0.3 to 1.6  
-0.3 to 3.7  
-0.3 to 3.7  
-55 to 150  
DD  
A1V , A2V  
V
3, 4, 5  
3, 4  
DD  
DD  
OV  
V
DD  
V
V
2
IN  
Storage temperature range  
Notes:  
T
°C  
STG  
1. Functional and tested operating conditions are given in Table 3-2 Recommended Operating Conditions. Absolute maximum rat-  
ings are stress ratings only, and functional operation at the maximums is not guaranteed. Stresses beyond those listed above may  
affect device reliability or cause permanent damage to the device.  
2. Caution: Transient V overshoots of up to OV + 0.8 V, with a maximum of 4.0 V for 3.3 V operation, and undershoots down to  
IN  
DD  
GND - 0.8 V, are allowed for up to 5 ns.  
3. Caution: OV must not exceed V /AV by more than 2.5 V continuously. OV may exceed V /AV by up to 2.65 V for up  
DD  
DD  
DD  
DD  
DD  
DD  
to 20 ms during power-on or power-off. OV must not exceed V /AV by more than 2.65 V for any amount of time.  
DD  
DD  
DD  
4. Caution: V /AV must not exceed OV by more than 1.0 V continuously. V /AV may exceed OV by up to 1.6 V for up  
DD  
DD  
DD  
DD  
DD  
DD  
to 20 ms during power-on or power-off. V /AV must not exceed OV by more than 1.6 V for any amount of time.  
DD  
DD  
DD  
5. Caution: AV must not exceed V by more than 0.5 V at any time.  
DD  
DD  
Table 3-2. Recommended Operating Conditions  
Characteristic  
Core supply voltage (733 MHz–800 MHz)  
Core supply voltage (933 MHz–1.0 GHz)  
PLL supply voltage (733 MHz–800 MHz)  
PLL supply voltage (933 MHz–1.0 GHz)  
60× bus supply voltage (1.8 V)  
60× bus supply voltage (2.5 V)  
60× bus supply voltage (3.3 V)  
Input voltage  
Symbol  
Value  
Unit  
V
Notes  
1, 2, 4  
1, 2  
1, 3, 4  
1, 3  
2
V
V
1.4 to 1.5  
DD  
DD  
1.45 to 1.55  
1.4 to 1.5  
V
AV  
AV  
OV  
OV  
OV  
V
DD  
DD  
DD  
DD  
DD  
IN  
1.45 to 1.55  
1.7 to 1.9  
V
V
2.375 to 2.625  
3.135 to 3.465  
V
2
V
2
V
GND to OV  
V
2
DD  
Die-junction temperature  
T
-40 to 105  
°C  
J
Notes:  
1. Lower core voltages are supported to allow slower operation at substantial power savings.  
2. These are recommended and tested operating conditions. Proper device operation outside of these conditions is not guaranteed.  
3. AV should be set to the same value as V for single PLL operation.  
DD  
DD  
4. Operation with Vdd up to 1.55V is supported, but the power dissipation will increase.  
750GX_ds_body.fm SA14-2765-02  
September 2, 2005  
Electrical and Thermal Characteristics  
Page 15 of 73