Datasheet
IBM PowerPC 750GX RISC Microprocessor
DD1.X
2.2 General Parameters
Table 2-1. 750GX General Parameters
Item
Description
Notes
0.13-µm copper silicon-on-insulator (CSOI) technology
6-layer metallization plus one level of local interconnect
Technology
Die Size
52.5 sq. mm (diced 7.6 mm × 6.9 mm)
Logic design
Fully static
292-pin ceramic ball grid array (CBGA)
21 × 21 mm (1.0-mm pitch)
0.8-mm ball size
Package
1.45 V 50 mV for 733 and 800 MHz
1.5 V 50 mV for 933 MHz and 1.0 GHz
Core power supply
1
2
3.3 V 165 mV (BVSEL = 1, L1_TSTCLK = 0) or
2.5 V 125 mV (BVSEL = 1, L1_TSTCLK = 1) or
1.8 V 100 mV (BVSEL = 0, L1_TSTCLK = 1)
I/O power supply
Notes:
1. Lower core voltages are offered to allow slower operation at substantial power savings (see the IBM PowerPC 750GX RISC Micro-
processor Supplement for power reduction trade-offs).
2. BVSEL = 0, L1_TSTCLK = 0 is an invalid setting.
Overview
750GX_ds_body.fm SA14-2765-02
September 2, 2005
Page 14 of 73
IBM [ IBM ]
