IBM16M64644HGA
IBM16M64734HGA
IBM16M32644HGA
IBM16M32734HGA
Preliminary
32/64Mx64/72 1 or 2 Bank Registered DDR SDRAM Module
Absolute Maximum Ratings
Symbol
Parameter
Voltage on I/O pins relative to V
Rating
Units
V
V
, V
−0.5 to VDDQ+ 0.5
IN
OUT
SS
SDRAM
device
−0.5 to +2.7
V
V
V
Voltage on Inputs relative to V
SS
IN
Serial PD
device
-0.3 to +6.5
V
Voltage on V supply relative to V
SS
−0.5 to +2.7
−0.5 to +2.7
−0.3 to +5.5
0 to +70
V
V
DD
DD
V
Voltage on V
Voltage on V
supply relative to V
DDQ SS
DDQ
V
supply relative to V
SS
V
DDSPD
DDSPD
T
Operating Temperature (Ambient)
Storage Temperature (Plastic)
Power Dissipation
°C
°C
W
A
T
−55 to +150
TBD
STG
P
D
I
Short Circuit Output Current
50
mA
OUT
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Capacitance
Parameter
Symbol
Max.
7
Units
pF
Notes
Input Capacitance: CK0, CK0
C
C
C
C
1
1
1
1
I1
I2
I3
I4
Input Capacitance: A0-A12, BA0, BA1, WE, RAS, CAS, CKE0, CKE1, SO, S1
Input Capacitance: RESET
7
pF
7
pF
Input Capacitance: SA0-SA2, SCL
9
pF
32Mx64/72
C
C
C
10
15
11
pF
IO1
IO2
IO3
Input/Output Capacitance: DQ0-63, DQS0-8, DM0-8, CB0-7
Input/Output Capacitance: SDA
1, 2, 3
64Mx64/72
pF
pF
1. V
= V = 2.5V 0.2V, f = 100MHz, T = 25°C, V
(DC) = V
OUT DDQ/2
,
DDQ
DD
A
VOUT (Peak to Peak) = 0.2V.
2. DM inputs are grouped with I/O pins reflecting the fact that they are matched in
loading to DQ and DQS to facilitate trace matching at the board level.
3. CB0-7, DQS8 and DM8 are used on x72 DIMM configurations only.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
19L7358.H02502
3/00
Page 13 of 28
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