Discontinued (9/98 - last order; 3/99 - last ship)
IBM11M4735C
IBM11M4735CB
4M x 72 DRAM Module
Read-Modify-Write Cycle
-50
-60
Symbol
Parameter
Unit
Notes
Min
123
70
40
50
7
Max
—
Min
143
82
Max
—
tRWC
tRWD
tCWD
tAWD
tOEH
Read-Modify-Write Cycle Time
RAS to WE Delay Time
ns
ns
ns
ns
ns
—
—
1
1
1
CAS to WE Delay Time
—
44
—
Column Address to WE Delay Time
OE Command Hold Time
—
57
—
—
10
—
1. tWCS, tRWD, tCWD, and tAWD are not restrictive parameters. They are included in the datasheet as electrical characteristics only. If
WCS ≥ tWCS(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
t
entire cycle. If tRWD ≥ tRWD(min.), tCWD ≥ tCWD(min.), and tAWD ≥ tAWD(min.), the cycle is a Read-Modify-Write cycle and the data will
contain read from the selected cell: If neither of the above sets of conditions is met, the condition of the data (at access time) is
indeterminate.
EDO Mode Cycle
-50
-60
Symbol
Parameter
Units
Notes
Min.
8
Max.
10K
—
Min.
10
25
72
10
2
Max.
10K
—
tHCAS
tHPC
tHPRWC
tDOH
CAS Pulse Width (EDO Page Mode)
EDO Page Mode Cycle Time (Read/Write)
EDO Page Mode Read Modify Write Cycle Time
Data-out Hold Time from CAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
63
10
2
—
—
—
—
tWHZ
Output buffer Turn-Off Delay from WE
WE Pulse Width to Output Disable at CAS High
RAS Hold Time from CAS Precharge
Access Time from CAS Precharge
EDO Page Mode RAS Pulse Width
OE High Pulse Width
15
15
tWPZ
7
—
10
40
—
—
tCPRH
tCPA
tRASP
tOEP
35
—
50
10
10
—
—
35
40
1
125K
—
60
10
10
125K
—
tOEHC
OE High Hold Time from CAS High
—
—
1. Measured with the specified current load and 100pF at VOL = 0.8V and VOH = 2.0V.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H4201.E20982E
Revised 8/98
Page 10 of 30
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