Discontinued (9/98 - last order; 3/99 - last ship)
IBM11M4735C
IBM11M4735CB
4M x 72 DRAM Module
Read Cycle
-50
-60
Symbol
Parameter
Access Time from RAS
Unit
Notes
Min
—
—
—
—
2
Max
50
18
30
18
—
Min
—
—
—
—
2
Max
60
20
35
20
—
tRAC
tCAC
tAA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1, 2
1, 2
1, 2
1, 2
Access Time from CAS
Access Time from Address
tOEA
tRCS
tRCH
tRRH
tRAL
tCLZ
tOES
tORD
tCDD
tOEZ
tOFF
Access Time from OE
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
CAS to Output in Low-Z
2
—
2
—
3
3
0
—
0
—
30
2
—
35
2
—
—
—
OE setup time prior to CAS
7
—
10
5
—
OE setup time prior to RAS (Hidden Refresh)
CAS to DIN Delay Time
2
—
—
18
2
—
20
2
—
5
4
Output Buffer Turn-off Delay from OE
Output Buffer Turn-off Delay
18
18
20
20
2
2
4, 6
1. Measured with the specified current load and 100pF.
2. Access time is determined by the last of tRAC, tCAC, tCPA, tAA, tOEA
3. Either tRCH or tRRH must be satisfied.
.
4. tOFF (max) and tOEZ (max) define the time at which the output achieves the open circuit condition and is not referenced to output
voltage levels.
5. Either tCDD or tODD must be satisfied.
6. tOFF is referenced from the rising edge of RAS or CAS , whichever is last.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H4201.E20982E
Revised 8/98
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