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IBM0625404GT3B-10E 参数 Datasheet PDF下载

IBM0625404GT3B-10E图片预览
型号: IBM0625404GT3B-10E
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 75 页 / 1245 K
品牌: IBM [ IBM ]
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IBM0625404GT3B IBM0625164GT3B  
IBM0625804GT3B IBM06254B4GT3B  
256Mb Double Data Rate Synchronous DRAM  
Advance  
AC Characteristics  
(Notes 1-5 apply to the following Tables; Electrical Characteristics and DC Operating Conditions, AC Operating  
Conditions, IDD Specifications and Conditions, and Electrical Characteristics and AC Timing.)  
1. All voltages referenced to VSS  
.
2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply  
voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified.  
3. Outputs measured with equivalent load. Refer to the AC Output Load Circuit below.  
4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5V in the test environment, but input timing is still refer-  
enced to VREF (or to the crossing point for CK, CK), and parameter specifications are guaranteed for the specified  
AC input levels under normal use conditions. The minimum slew rate for the input signals is 1V/ns in the range  
between VIL(AC) and VIH(AC)  
.
5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver effectively  
switches as a result of the signal crossing the AC input level, and remains in that state as long as the signal does not  
ring back above (below) the DC input LOW (HIGH) level.  
AC Output Load Circuit Diagram  
V
TT  
25Ω  
Timing Reference Point  
25Ω  
Output  
(V  
)
OUT  
30pF  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
29L0011.E36997  
10/99  
Page 54 of 75  
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