IBM0625404GT3B IBM0625164GT3B
IBM0625804GT3B IBM06254B4GT3B
256Mb Double Data Rate Synchronous DRAM
Advance
Pulldown and Pullup Characteristics
1. The nominal pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within
the inner bounding lines of the V-I curve.
2. The full variation in driver pulldown current from minimum to maximum process, temperature, and voltage
lie within the outer bounding lines of the V-I curve.
Pulldown Characteristics
140
Maximum
120
100
Nominal High
80
60
40
Nominal Low
Minimum
20
0
0
0.5
1
1.5
2
2.5
V
(V)
OUT
3. The nominal pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
4. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
Pullup Characteristics
0
-20
Minimum
Nominal Low
-40
-60
-80
-100
-120
-140
-160
Nominal High
Maximum
0
0.5
1
1.5
(V)
2
2.5
V
OUT
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed
1.7, for device drain to source voltages from 0 to V /2.
DDQ
6. The full variation in the ratio of the nominal pullup to pulldown current should be unity ± 10%, for device
drain to source voltages from 0 to V
/2.
DDQ
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
29L0011.E36997
10/99
Page 52 of 75
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