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IBM0118165T3-70 参数 Datasheet PDF下载

IBM0118165T3-70图片预览
型号: IBM0118165T3-70
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 X 0.825 INCH, TSOP2-50/44]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 31 页 / 350 K
品牌: IBM [ IBM ]
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IBM0118165M IBM0118165  
IBM0118165P IBM0118165B  
1M x 16 10/10 EDO DRAM  
Read-Modify-Write Cycle  
-50  
-60  
-6R  
-70  
Symbol  
Parameter  
Units  
Notes  
Min. Max. Min. Max. Min. Max. Min. Max.  
tRWC  
tRWD  
tCWD  
tAWD  
tOEH  
Read-Modify-Write Cycle Time  
RAS to WE Delay Time  
115  
67  
30  
42  
7
135  
79  
34  
49  
10  
135  
79  
36  
49  
10  
162  
94  
44  
59  
12  
ns  
ns  
ns  
ns  
ns  
1
1
1
CAS to WE Delay Time  
Column Address to WE Delay Time  
OE Command Hold Time  
1. tWCS, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics  
only. If tWCS tWCS (min), the cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the  
entire cycle. If tRWD tRWD (min), tCWD tCWD (min) and tAWD tAWD (min), the cycle is a Read-Modify-Write cycle and the data out  
will contain data read from the selected cell. If neither of the above sets of conditions are satisfied, the condition of the data out (at  
access time) is indeterminate.  
Extended Data Out (Hyper Page) Mode Cycle  
-50  
Max.  
-60 / -6R  
-70  
Max.  
Symbol  
Parameter  
Units  
Notes  
Min.  
8
Min.  
Max.  
10K  
Min.  
12  
tHCAS  
tHPC  
EDO (Hyper Page) Mode CAS Pulse Width  
10K  
10  
25  
10K  
ns  
ns  
EDO (Hyper Page) Mode Cycle Time (Read/Write) 20  
30  
EDO (Hyper Page) Mode Read Modify Write Cycle  
Time  
tHPRWC  
51  
60  
72  
ns  
tDOH  
tWHZ  
tWPZ  
tCPRH  
tCPA  
Data-out Hold Time from CAS  
5
10  
5
10  
5
15  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Output buffer Turn-Off Delay from WE  
WE Pulse Width to Output Disable at CAS High  
RAS Hold Time from CAS Precharge  
Access Time from CAS Precharge  
EDO (Hyper Page) Mode RAS Pulse Width  
OE High Pulse Width  
0
0
0
7
10  
35  
60  
10  
10  
10  
40  
70  
10  
10  
30  
50  
10  
10  
30  
35  
40  
1
tRASP  
tOEP  
125K  
125K  
125K  
tOEHC  
OE High Hold Time from CAS High  
1. Measured with the specified current load and 100pF at VOL = 0.8V and VOH = 2.0V.  
©IBM Corporation, 1995. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
28H4721  
SA14-4223-01  
Revised 12/95  
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