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IBM0118165T3-70 参数 Datasheet PDF下载

IBM0118165T3-70图片预览
型号: IBM0118165T3-70
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 X 0.825 INCH, TSOP2-50/44]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 31 页 / 354 K
品牌: IBM [ IBM ]
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IBM0118165 IBM0118165M
IBM0118165B IBM0118165P
1M x 16 10/10 EDO DRAM
AC Characteristics
(T
A
= 0 to +70˚C, V
CC
= 3.3V
±
0.3V or V
CC
= 5.0V
±
0.5V)
1. An initial pause of 200µs is required after power-up followed by 8 RAS only refresh cycles before proper device operation is
achieved. In case of using the internal refresh counter, a minimum of 8 CAS before RAS refresh cycles instead of 8 RAS only
refresh cycles is required.
2. AC measurements assume t
T
=2ns.
3. V
IH
(min.) and V
IL
(max.) are reference levels for measuring timing of input signals. Also, transition times are measured between V
IH
and V
IL
.
4. Valid column addresses are A0 through A9.
5. When both LCAS and UCAS go low at the same time, all 16 bits of data are read/written into the device. LCAS and UCAS cannot be
staggered within the same Read/Write cycle.
Read, Write, Read-Modify-Write and Refresh Cycles
(Common Parameters)
-50
Symbol
t
RC
t
RP
t
CP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
OED
t
DZO
t
DZC
t
T
Parameter
Min.
Random Read or Write Cycle Time
RAS Precharge Time
CAS Precharge Time
RAS Pulse Width
CAS Pulse Width
Row Address Setup Time
Row Address Hold Time
Column Address Setup Time
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
CAS Hold Time
CAS to RAS Precharge Time
OE to D
IN
Delay Time
OE Delay Time from D
IN
CAS Delay Time from D
IN
Transition Time (Rise and Fall)
89
35
8
50
8
0
10
0
8
14
12
8
45
5
13
0
0
2
Max.
10K
10K
_
37
25
30
Min.
104
40
10
60
10
0
10
0
10
14
12
10
50
5
15
0
0
2
Max.
10K
10K
45
30
30
Min.
104
40
10
60
10
0
10
0
10
14
12
10
50
5
15
0
0
2
Max.
10K
10K
43
30
30
Min.
124
50
10
70
12
0
10
0
10
14
12
12
55
5
15
0
0
2
Max.
10K
10K
50
35
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-60
-6R
-70
Units
Notes
1. Operation within the t
RCD
(max.) limit ensures that t
RAC
(max.) can be met. t
RCD
(max.) is specified as a reference point only. If t
RCD
is greater than the specified t
RCD
(max.) limit, then access time is controlled by t
CAC
.
2. Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.) is specified as a reference point only. If t
RAD
is
greater than the specified t
RAD
(max.) limit, then access time is controlled by t
AA
.
3. Either t
CDD
or t
OED
must be satisfied.
4. Either t
DZC
or t
DZO
must be satisfied.
5. AC measurements assume t
T
=2ns.
28H4721
SA14-4223-01
Revised 12/95
©IBM Corporation, 1995. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 7 of 32