111
Synchronous DRAM Memory 256Mbit
HY57V561620F(L)T(P) Series
ABSOLUTE MAXIMUM RATING
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
SS
Voltage on VDD supply relative to V
SS
Short Circuit Output Current
Power Dissipation
Symbol
T
A
T
STG
V
IN
, V
OUT
V
DD
, V
DDQ
I
OS
P
D
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
Unit
o
C
o
C
V
V
mA
W
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
DD
, V
DDQ
V
IH
V
IL
Min
3.0
2.0
-0.3
Max
3.6
V
DDQ
+ 0.3
0.8
Unit
V
V
V
Note
1
1, 2
1, 3
Note:
1. All voltages are referenced to V
SS
= 0V.
2. V
IH(
Max) is acceptable VDDQ + 2V for a pulse width with <= 3ns of duration.
3. V
IL
(min) is acceptable -2.0V for a pulse width with <= 3ns of duration.
AC OPERATING TEST CONDITION
(T
A
= 0 to 70
o
C,
V
DD
=3.3±0.3V / V
SS
=0V)
Parameter
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Note:
1. See Next Page
Symbol
V
IH
/ V
IL
V
trip
tR / tF
V
outref
CL
Value
2.4 / 0.4
1.4
1
1.4
50
Unit
V
V
ns
V
pF
Note
1
Rev 1.2 / Dec. 2009
9
HYNIX [ HYNIX SEMICONDUCTOR ]
