111
Synchronous DRAM Memory 256Mbit
HY57V561620F(L)T(P) Series
VTT =
1.4V
VTT =
1.4V
RT = 50
Ohom
RT = 50
Ohom
Output
Output
Z0 = 50 Ohom
50pF
50pF
DC Output Load Circuit
AC Output Load Circuit
CAPACITANCE (f=1MHz)
Parameter
Pin
Symbol
Min
Max
Unit
CLK
CI1
CI2
CI3
2.0
2.0
2.0
4.0
4.0
4.0
pF
pF
pF
Input capacitance
A0 ~ A12, BA0, BA1, CKE, CS, RAS, CAS, WE
LDQM, UDQM
Data input / output
capacitance
DQ0 ~ DQ15
CI/O
3.5
6.5
pF
o
DC CHARACTERRISTICS I (TA= 0 to 70 C)
Parameter
Input Leakage Current
Symbol
Min
Max
Unit
Note
ILI
ILO
-1
-1
2.4
-
1
1
uA
uA
V
1
2
Output Leakage Current
Output High Voltage
Output Low Voltage
VOH
VOL
-
IOH = -4mA
IOL = +4mA
0.4
V
Note:
1. VIN = 0 to 3.6V, All other balls are not tested under VIN =0V
2. DOUT is disabled, VOUT=0 to 3.6
Rev 1.2 / Dec. 2009
10
HYNIX [ HYNIX SEMICONDUCTOR ]
