HY29F002T
AC CHARACTERISTICS
Program and Erase Operations
Parameter
Speed Option
- 45 - 55 - 70 - 90
Description
Unit
JEDEC
tAVAV
Std
tWC Write Cycle Time (Note 1)
tAS Address Setup Time
Min 45
Min
55
70
90
ns
ns
tAVWL
0
tWLAX
tDVWH
tWHDX
tGHWL
tELWL
tAH Address Hold Time
tDS Data Setup Time
Min 40
Min 25
Min
45
25
45
30
45
45
ns
ns
tDH Data Hold Time
0
0
0
0
ns
tGHWL Read Recovery Time Before Write
tCS CE# Setup Time
Min
ns
Min
ns
tWHEH
tWLWH
tWHWL
tCH CE# Hold Time
Min
ns
tWP Write Pulse Width
tWPH Write Pulse Width High
Min 30
Min
30
35
45
ns
20
7
ns
Typ
µs
tWHWH1 tWHWH1 Byte Programming Operation (Notes 1, 2, 3)
Chip Programming Operation (Notes 1, 2, 3, 5)
Max
300
1.8
5.4
1
µs
Typ
sec
sec
sec
sec
sec
sec
cycles
cycles
µs
Max
Typ
tWHWH2 tWHWH2 Sector Erase Operation (Notes 1, 2, 4)
tWHWH3 tWHWH3 Chip Erase Operation (Notes 1, 2, 4)
Max
8
Typ
7
Max
55
Typ
1,000,000
100,000
50
Erase and Program Cycle Endurance
tVCS VCC Setup Time
Min
Min
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, VCC = 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90 °C, VCC = 4.5 volts (4.75 volts for 45 ns version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
are programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum
byte program time specified is exceeded. See Write Operation Status section for additional information.
Rev. 4.1/May 01
25
HYNIX [ HYNIX SEMICONDUCTOR ]
