APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
8.2 System Bad Block Replacement
Over the lifetime of the device additional Bad Blocks may develop. In this case each bad block has to be replaced by
copying the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will
return "fail" after Read Status Register.
The failure of a page program operation does not affect the data in other pages in the same block, thus the block can be
replaced by re-programming the current data and copying the rest of the replaced block to an available valid block.
Refer to Table 30 and Figure 47 for the recommended procedure to follow if an error occurs during an operation.
Operation
Erase
Recommended Procedure
Block Replacement
Block Replacement
ECC
Program
Read
Table 30: Block Failure
(2)
Data
Data
tꢇ
n page
tꢇ
(1)
Faiꢄure
n page
(3)
FFh
FFh
Buꢁꢁer memorꢂ oꢁ tꢇe controꢄꢄer
Figure 47 : Bad Block Replacement
NOTE:
1. An error occurs on Nth page of the Block A during program or erase operation.
2. Data in Block A is copied to same location in Block B which is valid block.
3. Nth page of block A which is in controller buffer memory is copied into Nth page of Block B
4. Bad block table should be updated to prevent from erasing or programming Block A
Rev 1.4 / OCT. 2010
61
B34416/177.179.157.84/2010-10-08 10:09
*ba53f20d-240c*
HYNIX [ HYNIX SEMICONDUCTOR ]
