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H27U4G8F2DTR-BC 参数 Datasheet PDF下载

H27U4G8F2DTR-BC图片预览
型号: H27U4G8F2DTR-BC
PDF下载: 下载PDF文件 查看货源
内容描述: 4千兆( 512M ×8位)NAND闪存 [4 Gbit (512M x 8 bit) NAND Flash]
分类和应用: 闪存
文件页数/大小: 62 页 / 1015 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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APCPCWM_4828539:WP_0000001WP_0000001  
1
H27(U_S)4G8_6F2D  
4 Gbit (512M x 8 bit) NAND Flash  
x8  
x8  
R/Vss  
R
R
R
1
2
3
4
5
6
7
8
48  
47  
46  
45  
44  
R
R
R
R/B4#  
R/B3#  
R/B2#  
R/B1#  
RE#  
CE1#  
CE2#  
R
IO7  
IO6  
43  
IO5  
42  
IO4  
41  
R
9
40  
R/Vcc  
39  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
R
38  
Vcc  
37  
Vss  
36  
Vcc  
Vss  
R
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
CE3#  
CE4#  
CLE  
ALE  
WE#  
WP#  
R
R/Vcc  
R
IO3  
IO2  
IO1  
IO0  
R
R
R
R
R
R
R
R/Vss  
Figure 44: ONFI 1.0 TSOP ti RyBYconfiguration) (*)  
NOTES:  
1) TSOP48 "ONFI" is supported on
2) Pins marked in Red are used in RyBy and CE# pins. If this is not  
the case, CE# for the stack is pd in Red Bold are Reserved ("R")  
3) this package is supported o
7.1 Power consumptions and pin capacitance for allowed stacking configurations  
Table 28 reports the power consumptions related to the single chip case. When multiple dice are stacked in the same  
package the power consumption of the stack will increase according to the nr of chips of it. As an example, the standby  
current is the sum of the standby currents of all the chips, while the active power consumption depends on the nr of chips  
concurrently executing different operations.  
Similarly, Table 26 reports the pin capacitance for the single chip case. When multiple dice are stacked in the same pack-  
age the pin/ball capacitance for the single input and the single input/output of the combo package must be calculated  
based on the number of chips sharing that input or that pin/ball.  
Rev 1.4 / OCT. 2010  
59  
B34416/177.179.157.84/2010-10-08 10:08  
*ba53f20d-240c*  
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