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H27U4G8F2DTR-BC 参数 Datasheet PDF下载

H27U4G8F2DTR-BC图片预览
型号: H27U4G8F2DTR-BC
PDF下载: 下载PDF文件 查看货源
内容描述: 4千兆( 512M ×8位)NAND闪存 [4 Gbit (512M x 8 bit) NAND Flash]
分类和应用: 闪存
文件页数/大小: 62 页 / 1015 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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APCPCWM_4828539:WP_0000001WP_0000001  
1
H27(U_S)4G8_6F2D  
4 Gbit (512M x 8 bit) NAND Flash  
8 Application notes and comments  
8.1 System Interface using CE# don't care  
To simplify system interface, CE# may be un-asserted during data loading or sequential data-reading as shown below. By  
operating in this way, it is possible to connect NAND Flash to a microprocessor.  
Contrary to standard Nand, CE# don't care devices do not allow sequential read function.  
CLE  
CE don’t-care  
CE  
WE  
ALE  
80h  
Start
Data Input  
10h  
I/Ox  
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Figure 46: Read Operation with CE# don't-care.  
Rev 1.4 / OCT. 2010  
60  
B34416/177.179.157.84/2010-10-08 10:09  
*ba53f20d-240c*  
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