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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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Automatic bit-rate alignment  
In boot-mode data transfer, the H8/3434F aligns its bit rate automatically to the host bit rate  
(maximum 9600 bps).  
Flash memory emulation by RAM  
Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates  
in real time.  
Writer mode  
As an alternative to on-board programming, the flash memory can be programmed and erased  
in writer mode, using a general-purpose PROM programmer. Program, erase, verify, and other  
specifications are the same as for HN28F101 standard flash memory.  
19.1.4 Block Diagram  
Figure 19.1 shows a block diagram of the flash memory.  
8
Internal data bus (upper)  
8
Internal data bus (lower)  
Operating  
mode  
MD1  
MD0  
Bus interface and control section  
FLMCR  
H'0000  
H'0002  
H'0004  
H'0001  
H'0003  
H'0005  
EBR1  
EBR2  
On-chip flash memory  
(32 kbytes)  
H'7FFC  
H'7FFE  
H'7FFD  
H'7FFF  
Upper byte  
Lower byte  
(even address)  
(odd address)  
Legend:  
FLMCR: Flash memory control register  
EBR1: Erase block register 1  
EBR2: Erase block register 2  
Figure 19.1 Flash Memory Block Diagram  
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