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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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19.1.2 Mode Programming and Flash Memory Address Space  
As its on-chip ROM, the H8/3434F has 32 kbytes of flash memory. The flash memory is  
connected to the CPU by a 16-bit data bus. The CPU accesses both byte data and word data in two  
states.  
The H8/3434F’s flash memory is assigned to addresses H'0000 to H'7FFF. The mode pins enable  
either on-chip flash memory or external memory to be selected for this area. Table 19.2  
summarizes the mode pin settings and usage of the memory area.  
Table 19.2 Mode Pin Settings and Flash Memory Area  
Mode Pin Setting  
Mode  
MD1  
0
MD0  
0
Memory Area Usage  
Illegal setting  
Mode 0  
Mode 1  
Mode  
0
1
External memory area  
21  
0
On-chip  
flash  
memory  
area  
Mode 3  
1
1
On-chip flash memory area  
19.1.3 Features  
Features of the flash memory are listed below.  
Five flash memory operating modes  
The flash memory has five operating modes: program mode, program-verify mode, erase  
mode, erase-verify mode, and prewrite-verify mode.  
Block erase designation  
Blocks to be erased in the flash memory address space can be selected by bit settings. The  
address space includes a large-block area (four blocks with sizes from 4 kbytes to 8 kbytes)  
and a small-block area (eight blocks with sizes from 128 bytes to 1 kbyte).  
Program and erase time  
Programming one byte of flash memory typically takes 50 µs. Erasing all blocks (32 kbytes)  
typically takes 1 s.  
Erase-program cycles  
Flash memory contents can be erased and reprogrammed up to 100 times.  
On-board programming modes  
These modes can be used to program, erase, and verify flash memory contents. There are two  
modes: boot mode and user programming mode.  
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